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IRFPS43N50KPBF

更新时间： 2024-11-28 04:23:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	130K
描述
HEXFET㈢ Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.078ヘ , ID = 47A )

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中文翻译

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数据手册

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IRFPS43N50KPBF 数据手册

PD- 95898

IRFPS43N50KPbF

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency

Circuits

V_DSS

500V

R_DS(on)typ.

I_D

47A

0.078Ω

l Lead-Free

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Low R_DS(on)

Super-247™

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

190

P_D@T_C= 25°C

Power Dissipation

540

W/°C

Linear Derating Factor

4.3

V_GS

Gate-to-Source Voltage

± 30

dv/dtPeak Diode Recovery dv/dt

Operating Junction and

9.0

V/ns

T_J

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

300

°C

Avalanche Characteristics

Symbol

E_AS

Parameter

Single Pulse Avalanche Energy

Avalanche Current

Typ.

Max.

910

Units

–––

I_AR

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Typ.

–––

Max.

0.23

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

–––

°C/W

www.irf.com

09/14/04

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