Datasheet > IRFR/U1010Z

IRFR/U1010Z

更新时间： 2024-09-17 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
11页	4285K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRFR/U1010Z 数据手册

PD - 96897

AUTOMOTIVE MOSFET

IRFR1010Z

IRFU1010Z

Features

HEXFET^®Power MOSFET

lAdvanced Process Technology

lUltra Low On-Resistance

l175°C Operating Temperature

lFast Switching

V_DSS= 55V

lRepetitive Avalanche Allowed up to Tjmax

R_DS(on)= 7.5mΩ

Description

I_D= 42A

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

D-Pak

I-Pak

IRFU1010Z

IRFR1010Z

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@ T = 25°C

360

140

@T = 25°C Power Dissipation

Linear Derating Factor

0.9

W/°C

Gate-to-Source Voltage

Single Pulse Avalanche Energy

± 20

E_{AS (Thermally limited)}

110

220

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

Operating Junction and

E_AR

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.11

Units

Junction-to-Case

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

–––

°C/W

R_θ

–––

110

www.kersemi.com

9/29/04

12 3 4 5 6 7...11

中文翻译

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