Datasheet > IRFPS38N60LPBF

IRFPS38N60LPBF

更新时间： 2024-11-28 04:23:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	200K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRFPS38N60LPBF 数据手册

PD - 95701

SMPS MOSFET

IRFPS38N60LPbF

HEXFET^®Power MOSFET

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

• Lead-Free

Trr typ.

V_DSSR_DS(on)typ.

120m

I_D

600V

Ω

170ns 38A

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise immunity.

SUPER TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

I_DM

150

540

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

4.3

±30

W/°C

V_GS

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

1.1(10)

N•m (lbf•in)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

––– ––– 38

Conditions

MOSFET symbol

Continuous Source Current

(Body Diode)

Pulsed Source Current

showing the

integral reverse

––– ––– 150

(Body Diode)

p-n junction diode.

T = 25°C, I = 38A, V = 0V

J S GS

Diode Forward Voltage

Reverse Recovery Time

––– –––

1.5

T = 25°C, I = 38A

––– 170 250

––– 420 630

T_J= 125°C, di/dt = 100A/µs

T = 25°C, I = 38A, V = 0V

Reverse Recovery Charge

––– 830 1240 nC

––– 2600 3900

T_J= 125°C, di/dt = 100A/µs

I_RRM

T = 25°C

Reverse Recovery Current

Forward Turn-On Time

––– 9.1

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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