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IRFPS43N50K PDF预览

IRFPS43N50K

更新时间: 2024-09-20 22:15:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 102K
描述
Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A)

IRFPS43N50K 数据手册

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PD- 93922B  
SMPS MOSFET  
IRFPS43N50K  
HEXFET® Power MOSFET  
Applications  
VDSS  
500V  
RDS(on) typ.  
ID  
47A  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency  
Circuits  
0.078Ω  
Benefits  
l Low Gate Charge Qg results in Simple  
Drive Requirement  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
l Low RDS(on)  
Super-247™  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
47  
29  
A
190  
PD @TC = 25°C  
Power Dissipation  
540  
W
W/°C  
V
Linear Derating Factor  
4.3  
VGS  
Gate-to-Source Voltage  
± 30  
dv/dtPeak Diode Recovery dv/dt ƒ  
Operating Junction and  
9.0  
V/ns  
TJ  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case )  
300  
°C  
Avalanche Characteristics  
Symbol  
EAS  
Parameter  
Single Pulse Avalanche Energy‚  
Avalanche Current  
Typ.  
Max.  
910  
47  
Units  
mJ  
A
–––  
–––  
–––  
IAR  
EAR  
Repetitive Avalanche Energy  
54  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.23  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
www.irf.com  
1
04/03/01  

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