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IRFPS40N50LPBF

更新时间： 2024-11-28 04:06:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	152K
描述
HEXFET㈢Power MOSFET

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中文翻译

获取价格

数据手册

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IRFPS40N50LPBF 数据手册

PD- 95141

IRFPS40N50LPbF

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

• Lead-Free

Trr _typ.

V_DSSR_DS(on)

I_D

typ.

500V

170ns 46A

0.087Ω

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise

immunity.

Super-247™

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

I_DM

180

540

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

4.3

W/°C

V_GS

±30

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

––– ––– 46

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

––– ––– 180

integral reverse

(Body Diode)

p-n junction diode.

T = 25°C, I = 46A, V = 0V

J S GS

Diode Forward Voltage

Reverse Recovery Time

––– ––– 1.5

––– 170 250

––– 220 330

T = 25°C, I = 46A

T_J= 125°C, di/dt = 100A/µs

T = 25°C, I = 46A, V = 0V

––– 705 1060 nC

Reverse Recovery Charge

T_J= 125°C, di/dt = 100A/µs

––– 1.3

2.0

I_RRM

T = 25°C

Reverse Recovery Current

Forward Turn-On Time

––– 9.0 –––

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

09/14/04

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中文翻译

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