IRFPS40N50L

更新时间： 2024-11-27 22:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	112K
描述
Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A)

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中文翻译

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数据手册

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IRFPS40N50L 数据手册

PD- 93923B

SMPS MOSFET

IRFPS40N50L

HEXFET^®Power MOSFET

Applications

l Switch Mode Power Supply (SMPS)

l UninterruptIble Power Supply

l High Speed Power Switching

l ZVS and High Frequency Circuit

l PWM Inverters

V_DSS

500V

R_DS(on)typ.

I_D

46A

0.087Ω

Benefits

l Low Gate Charge Qg results in Simple Drive Requirement

l Improved Gate, Avalanche and Dynamicdv/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche Voltage

and Current

l Low Trr and Soft Diode Recovery

l High Performance Optimised Anti-parallel Diode

SUPER TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

180

P_D@T_C= 25°C

Power Dissipation

540

W/°C

Linear Derating Factor

4.3

V_GS

Gate-to-Source Voltage

± 30

dv/dtPeak Diode Recovery dv/dt

Operating Junction and

V/ns

T_J

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

300

°C

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

Continuous Source Current

(Body Diode)

––– ––– 46

showing the

I_SM

Pulsed Source Current

(Body Diode)

––– ––– 180

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

––– ––– 1.5

––– 170 250

––– 220 330

T_J= 25°C, I_S= 46A, V_GS= 0V

T_J= 25°C

I_F= 46A

di/dt = 100A/µs

Reverse Recovery Time

Reverse Recovery Charge

T_J= 125°C

––– 705 1060 nC T_J= 25°C

Q_rr

––– 1.3 2.0

––– 9.0 –––

µC T_J= 125°C

I_RRM

t_on

Reverse Recovery Current

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Typical SMPS Topologies

Bridge Converters

l All Zero Voltage Switching

www.irf.com

05/09/01

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中文翻译

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