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IRFPS3810PBF

更新时间： 2024-09-21 04:23:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	173K
描述
HEXFET㈢ Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFPS3810PBF 数据手册

PD - 95703

IRFPS3810PbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 100V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 0.009Ω

l Fully Avalanche Rated

I_D= 170A

l Lead-Free

Description

The HEXFET^®Power MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed

and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in

a wide variety of applications.

Super-247™

Absolute Maximum Ratings

Parameter

Max.

170

120

670

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

580

W/°C

Linear Derating Factor

3.8

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 30

1350

100

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

2.3

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.26

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

–––

°C/W

www.irf.com

9/10/04

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中文翻译

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IRFPS3810PBF 替代型号

型号	品牌	替代类型	描述	数据表
CSD19531KCS	TI	功能相似	100V N-Channel NexFETâ¢ Power MOSFETs
IRFPS3810	INFINEON	功能相似	Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=

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