Datasheet > CSD19531KCS

CSD19531KCS

更新时间： 2024-09-21 12:54:39

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
7页	838K
描述
100V N-Channel NexFETâ¢ Power MOSFETs

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CSD19531KCS 数据手册

CSD19531KCS

www.ti.com

SLPS407 –SEPTEMBER 2013

100V N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD19531KCS

FEATURES

•

Ultra Low Qg and Qgd

Low Thermal Resistance

Avalanche Rated

PRODUCT SUMMARY

T_A= 25°C

V_DS

TYPICAL VALUE

UNIT

Drain to Source Voltage

Gate Charge Total (10V)

Gate Charge Gate to Drain

100

Q_g

mΩ

Pb Free Terminal Plating

RoHS Compliant

Q_gd

7.5

V_GS= 6V

7.3

6.4

R_DS(on)Drain to Source On Resistance

V_GS(th)Threshold Voltage

Halogen Free

V_GS= 10V

TO-220 Plastic Package

2.7

APPLICATIONS

ORDERING INFORMATION

Device

CSD19531KCS

Package

Media

Qty

Ship

Tube

•

Secondary Side Synchronous Rectifier

Hot Swap Telecom

TO-220 Plastic

Package

Tube

Motor Control

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

T_A= 25°C

VALUE

UNIT

This 100V, 6.4mΩ, TO-220 NexFET™ power

MOSFET has been designed to minimize losses in

power conversion applications.

V_DS

V_GS

Drain to Source Voltage

100

±20

Gate to Source Voltage

Continuous Drain Current (Package limited),

T_C= 25°C

100

105

Pin Out Drawing

Continuous Drain Current (Silicon limited),

T_C= 25°C

I_D

Drain (Pin 2)

Continuous Drain Current (Silicon limited),

T_C= 100°C

I_DM

P_D

T_J,

Pulsed Drain Current ⁽¹⁾

122

179

Power Dissipation

Operating Junction and Storage

–55 to 150

180

°C

T_STGTemperature Range

Gate

(Pin 1)

Avalanche Energy, single pulse

I_D= 60A, L = 0.1mH, R_G= 25Ω

E_AS

(1) Pulse duration ≤300μs, Duty cycle ≤1%

Source (Pin 3)

R_DS(on)vs V_GS

GATE CHARGE

T_C= 25°C,I _D= 60A

T_C= 125°C,I _D= 60A

I_D= 60A

V_DS= 50V

Q_g- Gate Charge (nC)

V_GS- Gate-to- Source Voltage (V)

G001

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7

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CSD19531KCS 替代型号

型号	品牌	替代类型	描述	数据表
CSD19536KCS	TI	类似代替	CSD19536KCS, 100 V N-Channel NexFET Power MOSFET
CSD19535KCS	TI	类似代替	CSD19535KCS, 100 V N-Channel NexFET Power MOSFET
CSD19533KCS	TI	类似代替	100 V N-Channel NexFET Power MOSFETs

与CSD19531KCS相关器件

型号	品牌	获取价格	描述	数据表
CSD19531Q5A	TI	获取价格	100V N-Channel NexFET Power MOSFETs
CSD19531Q5A_16	TI	获取价格	100V N-Channel NexFET Power MOSFETs
CSD19531Q5AT	TI	获取价格	100V, N ch NexFET MOSFET™, single SON5x6, 6.4mOhm 8-VSONP -55 to 150
CSD19532KTT	TI	获取价格	采用 D2PAK 封装的单路、5.6mΩ、100V、N 沟道 NexFET™ 功率 MOS
CSD19532KTTT	TI	获取价格	采用 D2PAK 封装的单路、5.6mΩ、100V、N 沟道 NexFET™ 功率 MOS
CSD19532Q5B	TI	获取价格	100 V N-Channel NexFETâ¢ Power MOSFET
CSD19532Q5B_16	TI	获取价格	100V N-Channel NexFET Power MOSFET
CSD19532Q5BT	TI	获取价格	暂无描述
CSD19533KCS	TI	获取价格	100 V N-Channel NexFET Power MOSFETs
CSD19533Q5A	TI	获取价格	100 V N-Channel NexFET Power MOSFETs

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