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IRFPS3815 PDF预览

IRFPS3815

更新时间: 2024-09-20 22:32:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 104K
描述
Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)

IRFPS3815 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SUPER-247, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1610 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (ID):105 A
最大漏源导通电阻:0.015 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):390 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFPS3815 数据手册

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PD - 93911  
IRFPS3815  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
D
VDSS = 150V  
l 175°C Operating Temperature  
l Fast Switching  
RDS(on) = 0.015Ω  
G
l Fully Avalanche Rated  
ID = 105A  
S
Description  
The HEXFET® Power MOSFETs from International  
Rectifier utilize advanced processing techniques to  
achieve extremely low on-resistance per silicon area.  
This benefit, combined with the fast switching speed  
and ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use in  
a wide variety of applications.  
Super-247™  
Absolute Maximum Ratings  
Parameter  
Max.  
105  
74  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
390  
441  
2.9  
PD @TC = 25°C  
PowerDissipation  
W
W/°C  
V
LinearDeratingFactor  
VGS  
EAS  
IAR  
Gate-to-SourceVoltage  
± 30  
1610  
58  
Single Pulse Avalanche Energy‚  
AvalancheCurrent  
mJ  
A
EAR  
dv/dt  
TJ  
RepetitiveAvalancheEnergy  
Peak Diode Recovery dv/dt ƒ  
OperatingJunctionand  
38  
mJ  
V/ns  
3.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
SolderingTemperature, for10seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.34  
–––  
40  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
www.irf.com  
1
3/14/01  

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