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IRFPS37N50APBF PDF预览

IRFPS37N50APBF

更新时间: 2024-09-21 02:58:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
9页 147K
描述
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.13ヘ , ID = 36A )

IRFPS37N50APBF 数据手册

 浏览型号IRFPS37N50APBF的Datasheet PDF文件第2页浏览型号IRFPS37N50APBF的Datasheet PDF文件第3页浏览型号IRFPS37N50APBF的Datasheet PDF文件第4页浏览型号IRFPS37N50APBF的Datasheet PDF文件第5页浏览型号IRFPS37N50APBF的Datasheet PDF文件第6页浏览型号IRFPS37N50APBF的Datasheet PDF文件第7页 
PD- 95142  
IRFPS37N50APbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
VDSS  
500V  
RDS(on) max  
ID  
36A  
l Switch Mode Power Supply (SMPS)  
l Uninterruptable Power Supply  
l High Speed Power Switching  
l Lead-Free  
0.13Ω  
Benefits  
l Low Gate Charge Qg results in Simple  
Drive Requirement  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
l Effective Coss Specified (See AN  
1001)  
SUPER-247  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
36  
23  
A
144  
PD @TC = 25°C  
Power Dissipation  
446  
W
W/°C  
V
Linear Derating Factor  
3.6  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
3.5  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Typical SMPS Topologies  
l Full Bridge Converters  
l Power Factor Correction Boost  
Notes  through are on page 8  
www.irf.com  
1
09/14/04  

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