Datasheet > 晶体管 > 功率场效应晶体管> IRFPS29N60LPBF

IRFPS29N60LPBF

更新时间： 2024-11-28 03:15:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管功率场效应晶体管脉冲
页数	文件大小	规格书
9页	169K
描述
SMPS MOSFET

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数据手册

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IRFPS29N60LPBF 数据手册

PD - 95907

SMPS MOSFET

IRFPS29N60LPbF

HEXFET^®Power MOSFET

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

• Lead-Free

Trr typ.

V_DSSR_DS(on)typ.

175m

I_D

600V

Ω

130ns 29A

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

Super-247™

• Higher Gate voltage threshold offers improved noise immunity.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

I_DM

110

480

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

3.8

±30

W/°C

V_GS

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

1.1(10)

N•m (lbf•in)

Diode Characteristics

Symbol

Parameter

Continuous Source Current

Min. Typ. Max. Units

––– ––– 29

Conditions

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

––– ––– 110

integral reverse

(Body Diode)

p-n junction diode.

T = 25°C, I = 29A, V = 0V

J S GS

Diode Forward Voltage

Reverse Recovery Time

––– ––– 1.5

T = 25°C, I = 29A

––– 130 190 ns

––– 240 360

T_J= 125°C, di/dt = 100A/µs

T = 25°C, I = 29A, V = 0V

Reverse Recovery Charge

––– 630 950 nC

––– 1820 2720

T_J= 125°C, di/dt = 100A/µs

I_RRM

T = 25°C

Reverse Recovery Current

Forward Turn-On Time

––– 9.4

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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09/15/04

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