IRFPS35N50L

更新时间： 2024-09-20 22:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
8页	154K
描述
HEXFETPower MOSFET

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中文翻译

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数据手册

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IRFPS35N50L 数据手册

PD-94227A

IRFPS35N50L

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

Trr typ.

V_DSSR_DS(on)typ.

0.125

I_D

500V

Ω

170ns 34A

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise immunity.

Super-247™

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

I_DM

140

450

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

3.6

±30

W/°C

V_GS

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

1.1(10)

N•m (lbf•in)

Diode Characteristics

Symbol

Parameter

Continuous Source Current

Min. Typ. Max. Units

––– ––– 34

Conditions

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

––– ––– 140

integral reverse

(Body Diode)

p-n junction diode.

T = 25°C, I = 34A, V = 0V

Diode Forward Voltage

Reverse Recovery Time

––– ––– 1.5

––– 170 250

––– 220 330

T = 25°C, I = 34A

T_J= 125°C, di/dt = 100A/µs

T = 25°C, I = 34A, V = 0V

Reverse Recovery Charge

––– 670 1010 nC

––– 1500 2200

T_J= 125°C, di/dt = 100A/µs

I_RRM

T = 25°C

Reverse Recovery Current

Forward Turn-On Time

––– 8.5 –––

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

8/26/04

12 3 4 5 6 7 8

中文翻译

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