IRFPS30N60K

更新时间： 2024-09-20 22:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管脉冲
页数	文件大小	规格书
8页	137K
描述
SMPS MOSFET

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中文翻译

获取价格

数据手册

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IRFPS30N60K 数据手册

PD- 94417A

IRFPS30N60K

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

V_DSS

600V

R_DS(on)typ.

I_D

30A

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply

l High Speed Power Switching

160mΩ

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

Super-247™

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

120

P_D@T_C= 25°C

Power Dissipation

450

W/°C

Linear Derating Factor

3.6

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

300

°C

Avalanche Characteristics

Symbol

E_AS

Parameter

Single Pulse Avalanche Energy

Typ.

Max.

520

Units

–––

I_AR

Avalanche Current

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Typ.

–––

Max.

0.28

–––

Units

R_θJC

R_θCS

R_θJA

0.24

–––

°C/W

Junction-to-Ambient

www.irf.com

8/26/04

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中文翻译

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