是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.88 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 520 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 900 V | 最大漏极电流 (Abs) (ID): | 5.3 A |
最大漏极电流 (ID): | 5.3 A | 最大漏源导通电阻: | 2.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247AC |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 150 W |
最大脉冲漏极电流 (IDM): | 21.2 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK727-01 | FUJI |
功能相似 |
N-Channel Silicon Power MOS-FET | |
2SK2039 | TOSHIBA |
功能相似 |
HIGH SPPED, HIGH CURRENT SWITCHING APPLICATION. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIO |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STW5NB100 | STMICROELECTRONICS |
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N - CHANNEL 1000V - 4ohm - 4.3A - TO-247 PowerMESH MOSFET | |
STW5NB90 | STMICROELECTRONICS |
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N - CHANNEL 900V - 2.3ohm - 5.6A - TO-247 PowerMESH MOSFET | |
STW5NK100Z | STMICROELECTRONICS |
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N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET | |
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STW60NE10 | STMICROELECTRONICS |
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N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOSFET | |
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Automotive-grade N-channel 650 V, 0.041 typ., 46 A MDmesh V Power MOSFET in a TO-247 packa | |
STW63N65DM2 | STMICROELECTRONICS |
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N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO247-4 package | |
STW65N045M9-4 | STMICROELECTRONICS |
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N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET in a TO247-4 package |