5秒后页面跳转
STW5NA90 PDF预览

STW5NA90

更新时间: 2024-11-27 22:14:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 57K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STW5NA90 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.88
Is Samacsys:N雪崩能效等级(Eas):520 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):5.3 A
最大漏极电流 (ID):5.3 A最大漏源导通电阻:2.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):21.2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW5NA90 数据手册

 浏览型号STW5NA90的Datasheet PDF文件第2页浏览型号STW5NA90的Datasheet PDF文件第3页浏览型号STW5NA90的Datasheet PDF文件第4页浏览型号STW5NA90的Datasheet PDF文件第5页浏览型号STW5NA90的Datasheet PDF文件第6页 
STW5NA90  
STH5NA90FI  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTORS  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STW5NA90  
STH5NA90FI  
900 V  
900 V  
< 2.5 Ω  
< 2.5 Ω  
5.3 A  
3.5 A  
TYPICAL RDS(on) = 2.1 Ω  
± 30 V GATE-TO-SOURCE VOLTAGE  
RATING  
100% AVALANCHE TESTED  
3
REPETITIVE AVALANCHE DATA AT 100oC  
GATE CHARGE MINIMISED  
3
2
2
1
1
REDUCED THRESHOLD VOLTAGE SPREAD  
TO-247  
ISOWATT218  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLY (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STW5NA90 STH5NA90FI  
Unit  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
900  
900  
V
V
± 30  
V
5.3  
3.4  
3.5  
2.2  
A
ID  
A
I
DM()  
21.2  
150  
1.2  
21.2  
60  
A
Ptot  
Total Dissipation at Tc = 25 oC  
W
W/oC  
Derating Factor  
0.48  
4000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
V
-65 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
January 1998  

STW5NA90 替代型号

型号 品牌 替代类型 描述 数据表
2SK727-01 FUJI

功能相似

N-Channel Silicon Power MOS-FET
2SK2039 TOSHIBA

功能相似

HIGH SPPED, HIGH CURRENT SWITCHING APPLICATION. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIO

与STW5NA90相关器件

型号 品牌 获取价格 描述 数据表
STW5NB100 STMICROELECTRONICS

获取价格

N - CHANNEL 1000V - 4ohm - 4.3A - TO-247 PowerMESH MOSFET
STW5NB90 STMICROELECTRONICS

获取价格

N - CHANNEL 900V - 2.3ohm - 5.6A - TO-247 PowerMESH MOSFET
STW5NK100Z STMICROELECTRONICS

获取价格

N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
STW60N10 STMICROELECTRONICS

获取价格

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STW60N65M5 STMICROELECTRONICS

获取价格

N-channel 650 V, 0.049 ohm, 46 A MDmesh V Power MOSFET
STW60NE10 STMICROELECTRONICS

获取价格

N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOSFET
STW62N65M5 STMICROELECTRONICS

获取价格

Automotive-grade N-channel 650 V, 0.041 typ., 46 A MDmesh V Power MOSFET in a TO-247 packa
STW63N65DM2 STMICROELECTRONICS

获取价格

N沟道650 V、0.042 Ohm典型值、60 A MDmesh DM2功率MOSFET
STW65N023M9-4 STMICROELECTRONICS

获取价格

N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO247-4 package
STW65N045M9-4 STMICROELECTRONICS

获取价格

N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET in a TO247-4 package