Datasheet > STH22N95K5-2AG

STH22N95K5-2AG

更新时间： 2024-09-16 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	455K
描述
Automotive-grade N-channel 950 V, 280 mOhm typ., 17.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package

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STH22N95K5-2AG 技术参数

生命周期：	Active	Reach Compliance Code：	not_compliant
Factory Lead Time：	17 weeks	风险等级：	5.79

STH22N95K5-2AG 数据手册

STH22N95K5-2AG

Datasheet

Automotive-grade N-channel 950 V, 280 mΩ typ., 17.5 A MDmesh K5

Power MOSFET in an H²PAK-2 package

Features

TAB

DS(on)

max.

TOT

Order code

STH22N95K5-2AG

950 V

330 mΩ

17.5 A

250 W

•

AEC-Q101 qualified

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

H PAK-2

D(TAB)

100% avalanche tested

Zener-protected

G(1)

Applications

•

Switching applications

S(2,3)

NCHG1DTABS23TZ

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

Product status link

STH22N95K5-2AG

Product summary⁽¹⁾

Order code

Marking

STH22N95K5-2AG

22N95K5

Package

Packing

H²PAK-2

Tape and reel

1. The HTRB test was performed at 80%

in compliance with AEC-Q101

(BR)DSS

rev. C. All the other tests were

performed according to rev. D.

DS12151 - Rev 5 - April 2020

www.st.com

For further information contact your local STMicroelectronics sales office.

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