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STH315N10F7-6 PDF预览

STH315N10F7-6

更新时间: 2024-11-20 01:23:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
19页 1146K
描述
High avalanche ruggedness

STH315N10F7-6 数据手册

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STH315N10F7-2,  
STH315N10F7-6  
Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A  
STripFET™ F7 Power MOSFETs  
Datasheet  
-
production data  
Features  
VDS  
RDS(on) max.  
ID  
Order codes  
TAB  
TAB  
STH315N10F7-2  
STH315N10F7-6  
100 V  
2.3 mΩ  
180 A  
2
1
7
3
Designed for automotive applications and  
1
AEC-Q101 qualified  
H2PAK-6  
H2PAK-2  
Among the lowest RDS(on) on the market  
Excellent figure of merit (FoM)  
Low Crss/Ciss ratio for EMI immunity  
High avalanche ruggedness  
Applications  
Figure 1. Internal schematic diagram  
Switching applications  
Description  
These N-channel Power MOSFETs utilize  
STripFET™ F7 technology with an enhanced  
trench gate structure that results in very low on-  
state resistance, while also reducing internal  
capacitance and gate charge for faster and more  
efficient switching.  
Table 1. Device summary  
Order codes  
STH315N10F7-2  
STH315N10F7-6  
Marking  
Package  
Packaging  
H2PAK-2  
H2PAK-6  
315N10F7  
Tape and reel  
September 2014  
DocID025090 Rev 4  
1/19  
This is information on a product in full production.  
www.st.com  

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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 45A I(D) | TO-218