Datasheet > STH400N4F6-2

STH400N4F6-2

更新时间： 2024-11-20 01:23:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	794K
描述
High avalanche ruggedness

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STH400N4F6-2 数据手册

STH400N4F6-2,

STH400N4F6-6

Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A

STripFET™ VI DeepGATE™ Power MOSFETs

Datasheet production data

Features

Order codes

V_DS

R_DS(on)max

I_D

TAB

STH400N4F6-2

STH400N4F6-6

40 V

1.15 mΩ

180 A

• Designed for automotive applications and

AEC-Q101 qualified

H²PAK-2

• Low gate charge

H²PAK-6

• Very low on-resistance

• High avalanche ruggedness

Applications

Figure 1. Internal schematic diagram

• Switching applications

D(TAB)

Description

These devices are N-channel Power MOSFETs

developed using the 6^thgeneration of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFETs exhibits

the lowest R_DS(on)in all packages.

G(1)

S(2, 3)

S(2, 3, 4, 5, 6, 7)

H PAK-6

H PAK-2

AM14551V1

Table 1. Device summary

Order codes

Marking

Package

Packaging

STH400N4F6-2

STH400N4F6-6

H²PAK-2

H²PAK-6

400N4F6

Tape and reel

February 2014

DocID023429 Rev 2

1/18

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...18

中文翻译

下载PDF

与STH400N4F6-2相关器件

型号	品牌	获取价格	描述	数据表
STH400N4F6-6	STMICROELECTRONICS	获取价格	High avalanche ruggedness
STH410N4F7-2AG	STMICROELECTRONICS	获取价格	Switching applications
STH410N4F7-6AG	STMICROELECTRONICS	获取价格	Switching applications
STH45N10	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 45A I(D) \| TO-218
STH45N10FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 27A I(D) \| TO-218VAR
STH47N60DM6-2AG	STMICROELECTRONICS	获取价格	汽车级N沟道600 V、70 mOhm典型值、36 A MDmesh DM6功率MOSFE
STH48D35	TELEDYNE	获取价格	High Industrial Performance (HIPak) Solid-State Relays
STH48D50	TELEDYNE	获取价格	High Industrial Performance (HIPak) Solid-State Relays
STH4N80	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 4.3A I(D) \| TO-218
STH4N80FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 2.8A I(D) \| TO-218VAR