Datasheet > STH410N4F7-6AG

STH410N4F7-6AG

更新时间： 2024-11-07 01:21:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
19页	848K
描述
Switching applications

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STH410N4F7-6AG 数据手册

STH410N4F7-2AG,

STH410N4F7-6AG

Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7

Power MOSFETs in H²PAK-2 and H²PAK-6 packages

Datasheet - production data

Features

R_DS(on)

max.

Order code

V_DS

I_D

P_TOT

STH410N4F7-2AG

STH410N4F7-6AG

40 V

1.1 mΩ

200 A

365 W



Designed for automotive applications and

AEC-Q101 qualified



Among the lowest R_DS(on)on the market

Excellent figure of merit (FoM)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Figure 1: Internal schematic diagram

Applications



Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

Marking

Package

H²PAK-2

H²PAK-6

Packing

STH410N4F7-2AG

STH410N4F7-6AG

410N4F7

Tape And Reel

February 2016

DocID027734 Rev 4

1/19

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...19

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