是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.76 | Is Samacsys: | N |
雪崩能效等级(Eas): | 520 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 900 V |
最大漏极电流 (Abs) (ID): | 3.5 A | 最大漏极电流 (ID): | 3.5 A |
最大漏源导通电阻: | 2.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 60 W |
最大脉冲漏极电流 (IDM): | 21.2 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STH60N05 | STMICROELECTRONICS |
获取价格 |
60A, 50V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | |
STH60N10 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STH60N10FI | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STH65N05 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 65A I(D) | TO-218 | |
STH65N05FI | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 37A I(D) | TO-218VAR | |
STH65N06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 65A I(D) | TO-218 | |
STH65N06FI | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 37A I(D) | TO-218VAR | |
STH6N100 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STH6N100FI | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STH6N95K5-2 | STMICROELECTRONICS |
获取价格 |
N沟道950 V、1 Ohm典型值、6 A MDmesh K5功率MOSFET,H2PAK |