STH60N10

更新时间： 2024-11-22 22:07:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
11页	248K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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中文翻译

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数据手册

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STH60N10 数据手册

STH60N10/FI

STW60N10

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

I_D

STH60N10

STH60N10FI

STW60N10

100 V

< 0.025 Ω

60 A

36 A

60 A

TO-247

■

TYPICAL R_DS(on)= 0.02 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW GATE CHARGE

VERY HIGH CURRENT CAPABILITY

175^oC OPERATING TEMPERATURE

APPLICATION ORIENTED

TO-218

ISOWATT218

CHARACTERIZATION

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STH/STW60N10

Unit

STH60N10FI

V_DS

V_{DG R}

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

100

± 20

I_D

I_DM(•)

P_tot

240

200

1.33

240

Total Dissipation at T_c= 25 ^oC

W/^oC

^oC

Derating Factor

0.56

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

4000

-65 to 150

150

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/11

May 1993

12 3 4 5 6 7...11

中文翻译

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与STH60N10相关器件

型号	品牌	获取价格	描述	数据表
STH60N10FI	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STH65N05	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 65A I(D) \| TO-218
STH65N05FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 37A I(D) \| TO-218VAR
STH65N06	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 65A I(D) \| TO-218
STH65N06FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 37A I(D) \| TO-218VAR
STH6N100	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STH6N100FI	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STH6N95K5-2	STMICROELECTRONICS	获取价格	N沟道950 V、1 Ohm典型值、6 A MDmesh K5功率MOSFET，H2PAK
STH6NA80	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5.8A I(D) \| TO-218
STH6NA80FI	STMICROELECTRONICS	获取价格	N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR