Datasheet > STH51007G

STH51007G

更新时间： 2024-11-23 21:09:23

品牌	Logo	应用领域
英飞凌 - INFINEON		光纤
页数	文件大小	规格书
10页	235K
描述
Laser Diode Emitter, 1280nm Min, 1330nm Max, 1000Mbps, FC Connector, TO-18, Panel Mount, HERMETIC SEALED, SIMILAR TO TO-46, 4 PIN

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STH51007G 技术参数

Fiber Optics

STH51007x

High Power

1300 nm FP Laser

in FC or SC Receptacle Package

Features

• Designed for applications in fiber optic networks

• Laser Diode with Multi-Quantum Well structure

• Suitable for bit rates up to 1 Gbit/s

• Ternary Photodiode at rear mirror for monitoring

and control of radiant power

• Hermetically sealed subcomponents,

similar to TO 46

STH51007G

• SM receptacle with 2-hole flange and

optional connector

STH51007N

Data Sheet

2001-06-01

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
STH51007N	INFINEON	获取价格	Laser Diode Emitter, 1280nm Min, 1330nm Max, 1000Mbps, SC Connector, TO-46, Panel Mount, H
STH55N10	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 55A I(D) \| TO-218
STH55N10FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 33A I(D) \| TO-218VAR
STH5N90	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 5.3A I(D) \| TO-218
STH5N90FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 3.5A I(D) \| TO-218VAR
STH5NA100	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH5NA100FI	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH5NA90FI	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH60N05	STMICROELECTRONICS	获取价格	60A, 50V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
STH60N10	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR