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STH320N4F6-6 PDF预览

STH320N4F6-6

更新时间: 2024-11-20 01:23:19
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
19页 1071K
描述
Automotive switching applications

STH320N4F6-6 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:20 weeks风险等级:1.53
配置:Single最大漏极电流 (Abs) (ID):200 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高工作温度:175 °C
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W子类别:FET General Purpose Powers
表面贴装:YES处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STH320N4F6-6 数据手册

 浏览型号STH320N4F6-6的Datasheet PDF文件第2页浏览型号STH320N4F6-6的Datasheet PDF文件第3页浏览型号STH320N4F6-6的Datasheet PDF文件第4页浏览型号STH320N4F6-6的Datasheet PDF文件第5页浏览型号STH320N4F6-6的Datasheet PDF文件第6页浏览型号STH320N4F6-6的Datasheet PDF文件第7页 
STH320N4F6-2,  
STH320N4F6-6  
N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6  
STripFET™ VI DeepGATE™ Power MOSFET  
Datasheet — production data  
Features  
(1)  
Order codes  
VDS  
RDS(on) max  
ID  
TAB  
STH320N4F6-2  
STH320N4F6-6  
TAB  
40 V  
1.3 mΩ  
200 A  
1. Current limited by package.  
7
2
1
3
Standard threshold drive  
100% avalanche tested  
1
H2PAK-6  
H2PAK-2  
Applications  
Automotive switching applications  
Description  
Figure 1.  
Internal schematic diagram  
These devices are N-channel Power MOSFETs  
developed using the 6th generation of STripFET™  
DeepGATE™ technology, with a new gate  
structure. The resulting Power MOSFETs exhibits  
the lowest RDS(on) in all packages.  
D(TAB)  
D(TAB)  
G(1)  
G(1)  
S(2, 3)  
S(2, 3, 4, 5, 6, 7)  
H2PAK-2  
H2PAK-6  
SC06140_H2PAK-2-6  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
Tape and reel  
STH320N4F6-2  
STH320N4F6-6  
H2PAK-2  
H2PAK-6  
320N4F6  
February 2013  
Doc ID 024221 Rev 1  
1/19  
This is information on a product in full production.  
www.st.com  
19  

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