Datasheet > STH290N4F6-2AG

STH290N4F6-2AG

更新时间： 2024-11-06 01:16:03

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意法半导体 - STMICROELECTRONICS		/
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描述
High avalanche ruggedness

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STH290N4F6-2AG 数据手册

STH290N4F6-2AG,

STH290N4F6-6AG

Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6

Power MOSFETs in H²PAK-2 and H²PAK-6 packages

Datasheet - production data

Features

R_DS(on)

max.

Order code

V_DS

I_D

P_TOT

STH290N4F6-2AG

STH290N4F6-6AG

40 V

1.7 mΩ

180 A

300 W

•

Designed for automotive applications and

AEC-Q101 qualified

•

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Figure 1: Internal schematic diagram

Applications

•

Switching applications

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

Table 1: Device summary

Order code

Marking

Package

H²PAK-2

H²PAK-6

Packing

STH290N4F6-2AG

STH290N4F6-6AG

290N4F6

Tape and Reel

July 2015

DocID027971 Rev 1

1/19

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...19

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