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STH290N4F6-2AG PDF预览

STH290N4F6-2AG

更新时间: 2024-11-06 01:16:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
19页 486K
描述
High avalanche ruggedness

STH290N4F6-2AG 数据手册

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STH290N4F6-2AG,  
STH290N4F6-6AG  
Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6  
Power MOSFETs in H²PAK-2 and H²PAK-6 packages  
Datasheet - production data  
Features  
RDS(on)  
max.  
Order code  
VDS  
ID  
PTOT  
STH290N4F6-2AG  
STH290N4F6-6AG  
40 V  
1.7 mΩ  
180 A  
300 W  
Designed for automotive applications and  
AEC-Q101 qualified  
Very low on-resistance  
Very low gate charge  
High avalanche ruggedness  
Low gate drive power loss  
Figure 1: Internal schematic diagram  
Applications  
Switching applications  
Description  
This device is an N-channel Power MOSFET  
developed using the STripFET™ F6 technology  
with a new trench gate structure. The resulting  
Power MOSFET exhibits very low RDS(on) in all  
packages.  
Table 1: Device summary  
Order code  
Marking  
Package  
H²PAK-2  
H²PAK-6  
Packing  
STH290N4F6-2AG  
STH290N4F6-6AG  
290N4F6  
Tape and Reel  
July 2015  
DocID027971 Rev 1  
1/19  
www.st.com  
This is information on a product in full production.  

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