Datasheet > STH315N10F7-2

STH315N10F7-2

更新时间： 2024-11-24 01:23:19

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意法半导体 - STMICROELECTRONICS		/
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描述
High avalanche ruggedness

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STH315N10F7-2 数据手册

STH315N10F7-2,

STH315N10F7-6

Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A

STripFET™ F7 Power MOSFETs

Datasheet

production data

Features

V_DS

R_DS(on)max.

I_D

Order codes

TAB

STH315N10F7-2

STH315N10F7-6

100 V

2.3 mΩ

180 A

• Designed for automotive applications and

AEC-Q101 qualified

H²PAK-6

H²PAK-2

• Among the lowest R_DS(on)on the market

• Excellent figure of merit (FoM)

• Low C_rss/C_issratio for EMI immunity

• High avalanche ruggedness

Applications

Figure 1. Internal schematic diagram

• Switching applications

Description

These N-channel Power MOSFETs utilize

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1. Device summary

Order codes

STH315N10F7-2

STH315N10F7-6

Marking

Package

Packaging

H²PAK-2

H²PAK-6

315N10F7

Tape and reel

September 2014

DocID025090 Rev 4

1/19

This is information on a product in full production.

www.st.com

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