品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
15页 | 1037K | |
描述 | ||
汽车级N沟道24 V、0.95 mOhm典型值、180 A STripFET III功率MOSFET,H2PAK-6封装 |
生命周期: | Active | 包装说明: | ROHS COMPLIANT, H2PAK-7 |
针数: | 7 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 12 weeks |
风险等级: | 2.17 | 雪崩能效等级(Eas): | 1600 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 24 V | 最大漏极电流 (Abs) (ID): | 180 A |
最大漏极电流 (ID): | 180 A | 最大漏源导通电阻: | 0.0012 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 300 W |
最大脉冲漏极电流 (IDM): | 720 A | 子类别: | FET General Purpose Powers |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
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