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STH300NH02L-6 PDF预览

STH300NH02L-6

更新时间: 2024-11-06 14:58:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 1037K
描述
汽车级N沟道24 V、0.95 mOhm典型值、180 A STripFET III功率MOSFET,H2PAK-6封装

STH300NH02L-6 技术参数

生命周期:Active包装说明:ROHS COMPLIANT, H2PAK-7
针数:7Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:2.17雪崩能效等级(Eas):1600 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:24 V最大漏极电流 (Abs) (ID):180 A
最大漏极电流 (ID):180 A最大漏源导通电阻:0.0012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):720 A子类别:FET General Purpose Powers
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STH300NH02L-6 数据手册

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STH300NH02L-6  
Automotive-grade N-channel 24 V, 0.95 mΩ typ., 180 A  
2
STripFET™ III Power MOSFET in a H PAK-6 package  
Datasheet  
production data  
Features  
(1)  
Order code  
VDSS  
RDS(on) max. ID  
< 1.2 mΩ 180 A  
TAB  
STH300NH02L-6  
24 V  
1. Current limited by package.  
Designed for automotive applications and  
7
AEC-Q101 qualified  
1
Conduction losses reduced  
H2PAK-6  
Low profile, very low parasitic inductance, high  
current package  
Applications  
Figure 1. Internal schematic diagram  
Switching applications  
Description  
This device is an N-channel enhancement mode  
Power MOSFET produced using  
STMicroelectronics’ STripFET™ III technology,  
which is specifically designed to minimize on-  
resistance and gate charge to provide superior  
switching performance.  
Table 1. Device summary  
Order code  
Marking  
300NH02L  
Package  
Packaging  
H2PAK-6  
STH300NH02L-6  
Tape and reel  
July 2013  
DocID019022 Rev 4  
1/15  
This is information on a product in full production.  
www.st.com  
15  
 
 

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