Datasheet > STH30N65DM6-7AG

STH30N65DM6-7AG

更新时间： 2024-11-06 14:57:43

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	809K
描述
汽车级N沟道650 V、102 mOhm典型值、28 A MDmesh DM6功率MOSFET，H2PAK-7封装

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STH30N65DM6-7AG 数据手册

STH30N65DM6-7AG

Datasheet

Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6

Power MOSFET in an H²PAK-7 package

Features

TAB

DS(on)

max.

Order code

STH30N65DM6-7AG

650 V

115 mΩ

28 A

•

AEC-Q101 qualified

Fast-recovery body diode

H²PAK-7

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Drain(TAB)

Extremely high dv/dt ruggedness

Zener-protected

Gate(1)

Applications

•

Switching applications

Driver

source (2)

Power

source (3, 4, 5, 6, 7)

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

N-chG1DS2PS34567DTABZ

Product status link

STH30N65DM6-7AG

Product summary

Order code

STH30N65DM6-7AG

30N65DM6

Marking

Package

Packing

H²PAK-7

Tape and reel

DS13646 - Rev 2 - June 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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