品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
19页 | 486K | |
描述 | ||
High avalanche ruggedness |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STH2N120K5-2AG | STMICROELECTRONICS |
获取价格 |
汽车级N沟道1200 V、0.62 Ohm典型值、2 A MDmesh K5功率MOSFE | |
STH300NH02L-6 | STMICROELECTRONICS |
获取价格 |
汽车级N沟道24 V、0.95 mOhm典型值、180 A STripFET III功率M | |
STH30N65DM6-7AG | STMICROELECTRONICS |
获取价格 |
汽车级N沟道650 V、102 mOhm典型值、28 A MDmesh DM6功率MOSF | |
STH310N10F7-2 | STMICROELECTRONICS |
获取价格 |
N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK | |
STH310N10F7-6 | STMICROELECTRONICS |
获取价格 |
N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK | |
STH315N10F7-2 | STMICROELECTRONICS |
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High avalanche ruggedness | |
STH315N10F7-6 | STMICROELECTRONICS |
获取价格 |
High avalanche ruggedness | |
STH320N4F6-2 | STMICROELECTRONICS |
获取价格 |
Automotive switching applications | |
STH320N4F6-6 | STMICROELECTRONICS |
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Automotive switching applications | |
STH33N20 | STMICROELECTRONICS |
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N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |