品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
21页 | 1673K | |
描述 | ||
N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STH270N8F7-6 | STMICROELECTRONICS |
获取价格 |
N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK- | |
STH275N8F7-2AG | STMICROELECTRONICS |
获取价格 |
AEC-Q101 qualified | |
STH275N8F7-6AG | STMICROELECTRONICS |
获取价格 |
AEC-Q101 qualified | |
STH290N4F6-2AG | STMICROELECTRONICS |
获取价格 |
High avalanche ruggedness | |
STH290N4F6-6AG | STMICROELECTRONICS |
获取价格 |
High avalanche ruggedness | |
STH2N120K5-2AG | STMICROELECTRONICS |
获取价格 |
汽车级N沟道1200 V、0.62 Ohm典型值、2 A MDmesh K5功率MOSFE | |
STH300NH02L-6 | STMICROELECTRONICS |
获取价格 |
汽车级N沟道24 V、0.95 mOhm典型值、180 A STripFET III功率M | |
STH30N65DM6-7AG | STMICROELECTRONICS |
获取价格 |
汽车级N沟道650 V、102 mOhm典型值、28 A MDmesh DM6功率MOSF | |
STH310N10F7-2 | STMICROELECTRONICS |
获取价格 |
N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK | |
STH310N10F7-6 | STMICROELECTRONICS |
获取价格 |
N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK |