Datasheet > STH275N8F7-6AG

STH275N8F7-6AG

更新时间： 2024-11-24 01:17:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	889K
描述
AEC-Q101 qualified

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数据手册

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STH275N8F7-6AG 数据手册

STH275N8F7-2AG,

STH275N8F7-6AG

Automotive-grade N-channel 80 V, 1.7 mΩ typ., 180 A,

STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STH275N8F7-2AG

STH275N8F7-6AG

80 V

2.1 mΩ

180 A



AEC-Q101 qualified

Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Applications

Figure 1: Internal schematic diagram



Switching applications

Description

These N-channel Power MOSFETs utilize

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

Marking

Package

H²PAK-2

H²PAK-6

Packing

STH275N8F7-2AG

STH275N8F7-6AG

275N8F7

Tape and reel

January 2017

DocID027223 Rev 4

1/18

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...18

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