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STH270N8F7-6 PDF预览

STH270N8F7-6

更新时间: 2024-11-24 01:17:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
21页 1673K
描述
N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220

STH270N8F7-6 数据手册

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STH270N8F7-2, STH270N8F7-6,  
STP270N8F7  
N-channel 80 V, 0.0017 Ω typ., 180 A, STripFET™ VII DeepGATE  
Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220 packages  
Datasheet  
production data  
TAB  
Features  
TAB  
Order codes  
VDS  
RDS(on) max  
ID  
2
1
7
3
STH270N8F7-2  
STH270N8F7-6  
STP270N8F7  
1
0.0021 Ω  
0.0025 Ω  
H2PAK-2  
H2PAK-6  
80 V  
180 A  
TAB  
Ultra low on-resistance  
100% avalanche tested  
3
2
1
Applications  
TO-220  
Figure 1. Internal schematic diagram  
Switching applications  
Description  
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These devices are N-channel Power MOSFETs  
developed using the 7th generation of STripFET™  
DeepGATE™ technology, with a new gate  
structure. The resulting Power MOSFET exhibits  
the lowest RDS(on) in all packages.  
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3 ꢆꢈꢉ ꢅꢉꢂ ꢉ ꢄꢉ ꢊ ꢉꢃꢇ  
3ꢆꢅꢇ  
(0!+ꢋꢈꢉ (0!+ꢋꢊ  
4/ꢋꢈꢈꢀ  
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Table 1. Device summary  
Order codes  
Marking  
Package  
Packaging  
STH270N8F7-2  
STH270N8F7-6  
STP270N8F7  
H2PAK-2  
H2PAK-6  
TO-220  
Tape and reel  
Tube  
270N8F7  
October 2013  
DocID024006 Rev 3  
1/21  
This is information on a product in full production.  
www.st.com  
21  
 

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