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STH270N4F3-6 PDF预览

STH270N4F3-6

更新时间: 2024-11-23 12:28:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
19页 1023K
描述
N-channel 40 V, 1.4 mΩ typ., 180 A STripFET III Power MOSFET

STH270N4F3-6 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G6针数:7
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:12 weeks风险等级:2.28
雪崩能效等级(Eas):1000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):180 A最大漏极电流 (ID):180 A
最大漏源导通电阻:0.0017 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):720 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STH270N4F3-6 数据手册

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STH270N4F3-2, STH270N4F3-6  
N-channel 40 V, 1.4 mΩ typ., 180 A STripFET™ III Power MOSFET  
in H2PAK-2 and H2PAK-6 packages  
Datasheet production data  
Features  
Order codes  
VDS  
RDS(on) max  
ID  
TAB  
STH270N4F3-2  
STH270N4F3-6  
TAB  
40 V  
1.7 mΩ  
180 A  
2
7
Conduction losses reduced  
3
1
1
Low profile, very low parasitic inductance, high  
H2PAK-2  
H2PAK-6  
current package  
Applications  
Automotive switching applications  
Figure 1. Internal schematic diagram  
Description  
These devices are N-channel enhancement  
mode Power MOSFETs produced using  
STMicroelectronics’ STripFET™ III technology,  
which is specifically designed to minimize on-  
resistance and gate charge to provide superior  
switching performance.  
Table 1. Device summary  
Order codes  
Marking  
Package  
Packaging  
STH270N4F3-2  
STH270N4F3-6  
H2PAK-2  
H2PAK-6  
270N4F3  
Tape and reel  
March 2013  
DocID16957 Rev 2  
1/19  
This is information on a product in full production.  
www.st.com  
19  

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