是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G6 | 针数: | 7 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 12 weeks | 风险等级: | 2.28 |
雪崩能效等级(Eas): | 1000 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 180 A | 最大漏极电流 (ID): | 180 A |
最大漏源导通电阻: | 0.0017 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 300 W | 最大脉冲漏极电流 (IDM): | 720 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STH270N8F7-2 | STMICROELECTRONICS |
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N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK- | |
STH270N8F7-6 | STMICROELECTRONICS |
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N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK- | |
STH275N8F7-2AG | STMICROELECTRONICS |
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AEC-Q101 qualified | |
STH275N8F7-6AG | STMICROELECTRONICS |
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AEC-Q101 qualified | |
STH290N4F6-2AG | STMICROELECTRONICS |
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High avalanche ruggedness | |
STH290N4F6-6AG | STMICROELECTRONICS |
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High avalanche ruggedness | |
STH2N120K5-2AG | STMICROELECTRONICS |
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汽车级N沟道1200 V、0.62 Ohm典型值、2 A MDmesh K5功率MOSFE | |
STH300NH02L-6 | STMICROELECTRONICS |
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汽车级N沟道24 V、0.95 mOhm典型值、180 A STripFET III功率M | |
STH30N65DM6-7AG | STMICROELECTRONICS |
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汽车级N沟道650 V、102 mOhm典型值、28 A MDmesh DM6功率MOSF | |
STH310N10F7-2 | STMICROELECTRONICS |
获取价格 |
N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK |