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STB85NF3LL-1 PDF预览

STB85NF3LL-1

更新时间: 2024-09-12 22:14:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS
页数 文件大小 规格书
9页 266K
描述
N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET

STB85NF3LL-1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:TO-262, I2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.68配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):85 A
最大漏极电流 (ID):85 A最大漏源导通电阻:0.0095 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):110 W
最大脉冲漏极电流 (IDM):340 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB85NF3LL-1 数据手册

 浏览型号STB85NF3LL-1的Datasheet PDF文件第2页浏览型号STB85NF3LL-1的Datasheet PDF文件第3页浏览型号STB85NF3LL-1的Datasheet PDF文件第4页浏览型号STB85NF3LL-1的Datasheet PDF文件第5页浏览型号STB85NF3LL-1的Datasheet PDF文件第6页浏览型号STB85NF3LL-1的Datasheet PDF文件第7页 
STP85NF3LL  
STB85NF3LL-1  
2
N-CHANNEL 30V - 0.006- 85A TO-220/I PAK  
LOW GATE CHARGE STripFET™ POWER MOSFET  
PRELIMINARY DATA  
TYPE  
V
R
I
D
DSS  
DS(on)  
STP85NF3LL  
STB85NF3LL-1  
30 V  
30 V  
< 0.008 Ω  
< 0.008 Ω  
85 A  
85 A  
TYPICAL R (on) = 0.0075 (@4.5V)  
DS  
OPTIMAL R  
x Qg TRADE-OFF @4.5V  
DS(ON)  
CONDUCTION LOSSES REDUCED  
SWITCHING LOSSES REDUCED  
3
3
2
2
1
1
2
TO-220  
I PAK  
DESCRIPTION  
This application specific Power MOSFET is the  
third genaration of STMicroelectronics unique “  
Single Feature Size” strip-based process. The re-  
sulting transistor shows the best trade-off between  
on-resistance and gate charge. When used as  
high and low side in buck regulators, it gives the  
best performance in terms of both conduction and  
switching losses. This is extremely important for  
motherboards where fast switching and high effi-  
ciency are of paramount importance.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SPECIFICALLY DESIGNED AND OPTIMISED  
FOR HIGH EFFICIENCY CPU CORE DC/DC  
CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
30  
V
DGR  
GS  
V
Gate- source Voltage  
± 15  
85  
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
60  
A
D
C
I
()  
Drain Current (pulsed)  
340  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
110  
W
C
Derating Factor  
0.73  
–65 to 175  
175  
W/°C  
°C  
°C  
T
stg  
Storage Temperature  
T
Max. Operating Junction Temperature  
j
() Pulse width limited by safe operating area  
March 2001  
1/9  

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