Datasheet > SSM4410M

SSM4410M

更新时间： 2024-11-05 09:04:55

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
6页	134K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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数据手册

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SSM4410M 数据手册

SSM4410M

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Low on-resistance

Fast switching

30V

13.5mW

10A

DSS

R_DS(ON)

I_D

Simple drive requirement

SO-8

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial and industrial

surface mount applications and well suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current^1,2

P_D@ T_A=25°C

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

°C

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-amb

Thermal Resistance Junction-ambient

Max.

°C/W

Rev.2.02 12/29/2003

www.SiliconStandard.com

1 of 6

12 3 4 5 6

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