Datasheet > SSM4880AGM

SSM4880AGM

更新时间： 2024-11-05 09:04:55

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	227K
描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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SSM4880AGM 数据手册

SSM4880AGM

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low on-resistance

BV_DSS

R_DS(ON)

I_D

30V

Fast switching, planar construction

Simple drive requirement

9mΩ

13A

SO-8

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial and

industrial surface mount applications and the SSM4880AGM is well suited for

for low-voltage applications such as DC/DC converters.

Pb-free lead finish (second-level interconnect)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@ T_A=25°C

Total Power Dissipation

2.5

Linear Derating Factor

Single Pulse Avalanche Energy⁴

0.02

266

W/°C

E_AS

I_AR

Avalanche Current

7.3

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

°C

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

3/08/2005 Rev.2.2

www.SiliconStandard.com

1 of 5

12 3 4 5

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