Datasheet > SSM4957GM

SSM4957GM

更新时间： 2024-11-05 06:14:15

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
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描述
DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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技术参数
数据手册

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SSM4957GM 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	湿度敏感等级：	3
Base Number Matches：	1

SSM4957GM 数据手册

SSM4957(G)M

DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Simple drive requirement

Lower gate charge

BV _DSS

R _DS(ON)

I_D

-30V

24mΩ

-7.7A

Fast switching characteristics

SO-8

Description

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SSM4957M is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for low-voltage applications.

This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-30

Units

V_DS

V_GS

Drain-Source Voltage

± 20

Gate-Source Voltage

I_D@ T_A=25°C

I_D@ T_A=100°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-7.7

-6.1

-30

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

10/21/2004 Rev.1.01

www.SiliconStandard.com

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