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SSM4924GM PDF预览

SSM4924GM

更新时间: 2024-11-05 06:14:15
品牌 Logo 应用领域
SSC /
页数 文件大小 规格书
6页 292K
描述
Dual N-channel Enhancement-mode Power MOSFETs

SSM4924GM 数据手册

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SSM4924GM  
Dual N-channel Enhancement-mode Power MOSFETs  
Simple drive requirement  
Lower gate charge  
BVDSS  
RDS(ON)  
ID  
20V  
35m  
6A  
D2  
D2  
D1  
D1  
Fast switching characteristics  
G2  
S2  
Pb-free; RoHS compliant.  
G1  
SO-8  
S1  
DESCRIPTION  
D2  
D1  
Advanced Power MOSFETs from Silicon Standard provide the  
designer with the best combination of fast switching, ruggedized  
device design, low on-resistance and cost-effectiveness.  
G2  
G1  
The SSM4924GM is in an SO-8 package, which is widely preferred for  
commercial and industrial surface mount applications. This device is  
suitable for low voltage applications such as DC/DC converters.  
S1  
S2  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
20  
Gate-Source Voltage  
V
± 8  
ID@TA=25°C  
ID@TA=70°C  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1,4  
Total Power Dissipation  
Linear Derating Factor  
Storage Temperature Range  
Operating Junction Temperature Range  
6
A
4.8  
35  
A
A
PD@TA=25°C  
2
W
0.016  
-55 to 150  
-55 to 150  
W/°C  
°C  
°C  
TSTG  
TJ  
THERMAL DATA  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-amb  
Thermal Resistance Junction-ambient  
Max.  
°C/W  
12/10/2004 Rev.2.01  
www.SiliconStandard.com  
1 of 6  

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