Datasheet > SSM4955GM

SSM4955GM

更新时间： 2024-09-23 06:14:07

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SSC		/
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描述
Dual P-channel Enhancement-mode Power MOSFETs

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SSM4955GM 数据手册

SSM4955GM

Dual P-channel Enhancement-mode Power MOSFETs

PRODUCT SUMMARY

DESCRIPTION

The SSM4955GM acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as battery

management and general load-switching circuits.

BV_DSS

R_DS(ON)

I_D

-20V

45mW

-5.6A

The SSM4955GM is supplied in an RoHS-compliant

SO-8 package, which is widely used for medium power

commercial and industrial surface mount applications.

Pb-free; RoHS-compliant SO-8

SO-8

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

-20

Units

Drain-source voltage

Gate-source voltage

V_GS

± 20

I_D

Continuous drain current ³, T = 25°C

-5.6

T = 100°C

-4.5

I_DM

P_D

Pulsed drain current ^1,2

Total power dissipation ³, T = 25°C

-20

Linear derating factor

0.016

-55 to 150

W/°C

°C

T_STG

T_J

Storage temperature range

Operating junction temperature range

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

ΘJA

Maximum thermal resistance, junction-ambient³

62.5

°C/W

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on a square inch of copper pad on FR4 board ; 135°C/W when mounted on the minimum pad area required for soldering.

11/26/2005 Rev.3.01

www.SiliconStandard.com

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