Datasheet > SSM452

SSM452

更新时间： 2024-11-29 11:57:15

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	615K
描述
P-Channel Enhancement Mode Power MOSFET

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SSM452 数据手册

SSM452

-6 A, -30V, R_DS(ON)55mΩ

P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSM452 provide the designer with the best combination of

fast switching, low on-resistance and cost-effectiveness.

FEATURES

SOT-223

 Simple Drive Requirement

 Lower On-resistance

 Fast Switching

Top View

C B

MARKING



Drain

Millimeter

REF.



Gate

Min.

6.20

6.70

3.30

1.42

4.50

0.60

Max.

6.70

7.30

3.70

1.90

4.70

0.82

Min.

0.25

Max.

0.10

0.35



Source

2.30 REF.

2.90

3.10

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Drain – Source Voltage

Gate – Source Voltage

SYMBOL

V_DS

RATING

UNIT

-30

±20

-6.0

-4.8

-20

V_GS

T_A= 25°C

T_A= 70°C

Continuous Drain Current ³

I_D

Pulsed Drain Current ¹

Total Power Dissipation

Linear Derating Factor

I_DM

P_D

2.7

0.02

W / °C

Operating Junction & Storage Temperature

Range

T_J, T_STG

-55 ~ 150

°C

THERMAL DATA

Maximum Junction–Ambient ³

R_θJA

°C / W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

24-Jun-2010 Rev. A

Page 1 of 4

12 3 4

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