Datasheet > SSM4816SM

SSM4816SM

更新时间： 2024-09-23 06:14:15

品牌	Logo	应用领域
SSC		肖特基二极管
页数	文件大小	规格书
9页	353K
描述
DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE

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数据手册

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SSM4816SM 数据手册

SSM4816SM

DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE

S1/D2

Simple drive requirement

MOSFET-1 BV_DSS

R _DS(ON)

30V

S1/D2

Suitable for DC-DC Converters

Fast switching performance

22mΩ

I_D

6.7A

30V

13mΩ

11.5A

^G2MOSFET-2 BV_DSS

S2/A

SO-8

R_DS(ON)

I_D

Description

Advanced Power MOSFETs from Silicon Standard provide

the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

The SO-8 package is widely preferred for commercial and

industrial surface mount applications and is well suited for

low voltage applications such as DC/DC converters.

N-channel

MOSFET 1

S1/D2

Schottky Diode

N-channel

MOSFET 2

S2/A

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

MOSFET-1

MOSFET-2

V_DS

V_GS

Drain-Source Voltage

±20

6.7

5.3

Gate-Source Voltage

±20

I _D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

11.5

9.2

P_D@ T_A=25°C

Total Power Dissipation

1.4

0.01

2.4

Linear Derating Factor

0.02

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

Typ.

Max.

Rthj-a (MOSFET-1) Thermal Resistance Junction-ambient³

Rthj-a (MOSFET-2) Thermal Resistance Junction-ambient³

°C/W

Rthj-a (Schottky)

Thermal Resistance Junction-ambient³

Rev.1.01 4/16/2004

www.SiliconStandard.com

1 of 9

12 3 4 5 6 7...9

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