Datasheet > SSM4800M

SSM4800M

更新时间： 2024-09-23 06:14:07

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
6页	445K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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SSM4800M 数据手册

SSM4800M

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

Low On-Resistance

Fast Switching

BV_DSS

R _DS(ON)

I _D

25V

18mΩ

Simple Drive Requirement

SO-8

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SSM4800M is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for low-voltage applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-amb

Thermal Resistance Junction-ambient

Max.

℃/W

Rev.2.01 6/26/2003

www.SiliconStandard.com

1 of 6

12 3 4 5 6

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