Datasheet > SSM4565GM

SSM4565GM

更新时间： 2024-09-23 06:14:15

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描述
COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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SSM4565GM 数据手册

SSM4565M/GM

COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

N-CH BV_DSS

R_DS(ON)

I_D

40V

25mW

7.6A

Simple drive requirement

Lower gate charge

Fast switching characteristic

P-CH BV_DSS

R_DS(ON)

I_D

-40V

SO-8

33mW

-6.5A

Description

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SSM4565M is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters.

This device is available with Pb-free lead finish (second-level interconnect) as SSM4565GM.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-40

V_DS

V_GS

Drain-Source Voltage

±20

7.6

Gate-Source Voltage

±20

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-6.5

-5.2

-30

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

2.0

0.016

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

12/10/2004 Rev.2.01

www.SiliconStandard.com

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