Datasheet > SSM4575M

SSM4575M

更新时间： 2024-11-29 06:14:15

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描述
COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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SSM4575M 数据手册

SSM4575M

COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Simple drive requirement

Low on-resistance

N-Ch BV _DSS

60V

R _DS(ON)

36mW

Fast switching performance

I _D

P-Ch BV_DSS

R_DS(ON)

-60V

72mW

-4.2A

SO-8

Description

I_D

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

The SO-8 package is widely preferred for commercial and

industrial surface mount applications and is well suited for

low-voltage applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-60

V_DS

V_GS

Drain-Source Voltage

±20

Gate-Source Voltage

±20

I_D@ TA=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-4.2

4.7

-3.3

-30

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

2.0

0.016

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

Rev.1.01 7/05/2004

www.SiliconStandard.com

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