Datasheet > SSM4800AGM

SSM4800AGM

更新时间： 2024-01-16 09:24:27

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	718K
描述
N-Channel Enhancement Mode Power Mosfet

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SSM4800AGM 数据手册

SSM4800AGMꢀ

ꢀ

N-Channel Enhancement Mode

Power Mosfet

PRODUCT SUMMARY

Simple Drive Requirement

Low On-resistance

Fast Switching Characteristic

RoHS Compliant

BV_DSS

R_DS(ON)

I_D

30V

18mΩ

9.4A

SO-8

DESCRIPTION

The Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Pb-free; RoHS-compliant

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

Gate-Source Voltage

±25

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

9.4

7.5

P_D@T_A=25℃

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

Unit

Rthj-a

Max.

℃/W

02/09/2007 Rev.1.00

www.SiliconStandard.com

12 3 4 5

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