Datasheet > SSM4532GM

SSM4532GM

更新时间： 2024-11-29 06:14:07

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SSC		/
页数	文件大小	规格书
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描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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技术参数
数据手册

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SSM4532GM 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

SSM4532GM 数据手册

SSM4532GM

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

PRODUCT SUMMARY

N-CH BV_DSS

30V

50mΩ

Simple Drive Requirement

Low On-resistance

Fast Switching

R_DS(ON)

I_D

P-CH BV_DSS

R_DS(ON)

-30V

70mΩ

-4A

SO-8

DESCRIPTION

I_D

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

Pb-free; RoHS-compliant

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Rating

Units

N-channel

P-channel

-30

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-4

-3.2

-20

P_D@T_A=25℃

Total Power Dissipation

2.0

Linear Derating Factor

0.016

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

62.5

Unit

Rthj-amb

Max.

℃/W

08/17/2007 Rev.1.00

www.SiliconStandard.com

12 3 4 5 6 7...12

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