Datasheet > SSM4424GM

SSM4424GM

更新时间： 2022-12-19 03:19:06

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SSC		/
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描述
N-channel Enhancement-mode Power MOSFET

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SSM4424GM 数据手册

SSM4424GM

N-channel Enhancement-mode Power MOSFET

Simple drive requirement

Lower gate charge

BV_DSS

R_DS(ON)

I _D

30V

9mΩ

13.8A

Fast switching characteristics

Pb-free, RoHS compliant.

DESCRIPTION

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

SO-8

The SSM4424GM is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

± 20

Gate-Source Voltage

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

13.8

P_D@ T_A=25°C

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

Unit

Rthj-a

Max.

°C/W

5/25/2005 Rev.2.10

www.SiliconStandard.com

1 of 5

12 3 4 5

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