Datasheet > SSM4509GM

SSM4509GM

更新时间： 2024-09-23 06:14:15

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
8页	401K
描述
N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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SSM4509GM 数据手册

SSM4509GM

N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

N-CH BV_DSS

R_DS(ON)

I_D

30V

14mW

10A

Simple drive requirement

Low on-resistance

Fast switching characteristic

P-CH BV_DSS

R_DS(ON)

I_D

-30V

SO-8

20mW

-8.4A

Description

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SSM4509GM is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for applications such as low-voltage motor drives and inverters.

Pb-free lead finish (second-level interconnect)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-30

V_DS

V_GS

Drain-Source Voltage

±20

Gate-Source Voltage

±20

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-8.4

7.9

-6.7

-30

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

2.0

0.016

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

3/10/2005 Rev.1.01

www.SiliconStandard.com

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