Datasheet > SSM4513M

SSM4513M

更新时间： 2024-11-29 06:14:15

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
8页	320K
描述
N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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数据手册

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SSM4513M 数据手册

SSM4513M/GM

N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Simple drive requirement

Low on-resistance

N-CH BV_DSS

35V

36m

R _DS(ON)

Fast switching performance

I_D

P-CH BV_DSS

R_DS(ON)

5.8A

-35V

SO-8

68m

Description

I_D

-4.3A

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching, ruggedized

device design, low on-resistance and cost-effectiveness.

The SSM4513M is in the SO-8 package, which is widely

preferred for commercial and industrial surface mount applications,

and is well-suited for most low voltage applications.

This device is available with Pb-free lead finish (second-level interconnect) as SSM4513GM.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-35

V_DS

V_GS

Drain-Source Voltage

±20

5.8

4.7

Gate-Source Voltage

±20

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-4.3

-3.4

-20

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

2.0

0.016

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

10/12/2004 Rev.2.01

www.SiliconStandard.com

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