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SSM4507M PDF预览

SSM4507M

更新时间: 2024-11-05 09:04:55
品牌 Logo 应用领域
SSC /
页数 文件大小 规格书
7页 320K
描述
COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM4507M 数据手册

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SSM4507M  
COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS  
Simple drive requirement  
Lower gate charge  
N-Ch BV DSS  
30V  
D2  
D2  
36m  
D1  
R DS(ON)  
D1  
Fast switching performance  
ID  
P-Ch BVDSS  
RDS(ON)  
6.0A  
-30V  
72m  
-4.2A  
G2  
S2  
G1
S1
SO-8  
Description  
ID  
Advanced Power MOSFETs from Silicon Standard provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D2  
D1  
G2  
G1  
The SO-8 package is widely preferred for commercial and  
industrial surface mount applications and is well suited for  
low-voltage applications such as DC/DC converters.  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
-30  
VDS  
VGS  
Drain-Source Voltage  
30  
±20  
6
V
V
Gate-Source Voltage  
±20  
ID@TA=25°C  
ID@TA=70°C  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-4.2  
A
4.8  
20  
-3.4  
A
-20  
A
PD@TA=25°C  
Total Power Dissipation  
Linear Derating Factor  
2.0  
W
0.016  
W/°C  
°C  
°C  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
°C/W  
Rev.1.01 4/06/2004  
www.SiliconStandard.com  
1 of 7  

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