Datasheet > SSM4435

SSM4435

更新时间： 2024-11-05 06:14:15

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
7页	482K
描述
P -Channel E nhancement Mode MOS F E T

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数据手册

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SSM4435 数据手册

S S M4435

S outh S ea S emiconductor

J ULY,2004 Ver1.1

P -C hannel E nhancement Mode MOS FE T

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

) Max

20 @ VG S = -10V

35 @ VG S = -4.5V

-30V

-8A

S urface Mount P ackage.

S O-8

ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)

Limit

Unit

P arameter

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

-8

Drain C urrent-C ontinuous ^a@ T

-P ulsed ^b

=125 C

-40

-1.7

2.5

Drain-S ource Diode Forward C urrent ^a

Maximum P ower Dissipation ^a

Operating J unction and S torage

Temperature R ange

, TS TG

-55 to 150

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-Ambient ^a

J A

12 3 4 5 6 7

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