Datasheet > SSM4501GSD

SSM4501GSD

更新时间： 2024-11-05 06:14:15

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
8页	354K
描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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SSM4501GSD 数据手册

SSM4501GSD

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

PRODUCT SUMMARY

N-CH BV_DSS

30V

27mΩ

R_DS(ON)

Simple Drive Requirement

Low On-resistance

Fast Switching Characteristic

I_D

P-CH BV_DSS

R_DS(ON)

-30V

49mΩ

-5A

PDIP-8

DESCRIPTION

I_D

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

Pb-free; RoHS-compliant

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Rating

Units

N-channel

P-channel

-30

V_DS

V_GS

Drain-Source Voltage

±20

Gate-Source Voltage

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-5

5.8

-4.2

-30

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

62.5

Unit

Rthj-a

Max.

℃/W

01/28/2008 Rev.1.00

www.SiliconStandard.com

12 3 4 5 6 7 8

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